Invention Grant
- Patent Title: Method for producing single crystal
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Application No.: US14808375Application Date: 2015-07-24
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Publication No.: US09777400B2Publication Date: 2017-10-03
- Inventor: Shunsaku Ueta , Tsutomu Hori , Akira Matsushima
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2014-157587 20140801
- Main IPC: C30B23/06
- IPC: C30B23/06 ; C30B29/36

Abstract:
A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal.
Public/Granted literature
- US20160032487A1 METHOD FOR PRODUCING SINGLE CRYSTAL Public/Granted day:2016-02-04
Information query
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