Invention Grant
- Patent Title: Heteroepitaxial growth of orientation-patterned materials on orientation-patterned foreign substrates
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Application No.: US15455370Application Date: 2017-03-10
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Publication No.: US09777402B2Publication Date: 2017-10-03
- Inventor: Vladimir L. Tassev , Rita D. Peterson
- Applicant: The United States of America, as represented by the Secretary of the Air Force
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Air Force
- Current Assignee: The United States of America as represented by the Secretary of the Air Force
- Current Assignee Address: US DC Washington
- Agency: AFMCLO/JAZ
- Agent Timothy Barlow
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; C30B25/04 ; G02F1/355 ; C30B25/18 ; C30B29/44 ; C30B29/42 ; G02F1/39
Abstract:
A method of forming a layered OP material is provided, where the layered OP material comprises an OPGaAs template, and a layer of GaP on the OPGaAs template. The OPGaAs template comprises a patterned layer of GaAs having alternating features of inverted crystallographic polarity of GaAs. The patterned layer of GaAs comprises a first feature comprising a first crystallographic polarity form of GaAs having a first dimension, and a second feature comprising a second crystallographic polarity form of GaAs having a second dimension. The layer of GaP on the patterned layer of GaAs comprises alternating regions of inverted crystallographic polarity that generally correspond to their underlying first and second features of the patterned layer of GaAs. Additionally, each of the alternating regions of inverted crystallographic polarity of GaP are present at about 100 micron thickness or more.
Public/Granted literature
- US20170183793A1 Heteroepitaxial Growth of Orientation-Patterned Materials on Orientation-Patterned Foreign Substrates Public/Granted day:2017-06-29
Information query
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