Invention Grant
- Patent Title: Semiconductor probe, testing device and testing method for testing quantum battery
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Application No.: US14404803Application Date: 2012-05-31
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Publication No.: US09778284B2Publication Date: 2017-10-03
- Inventor: Harutada Dewa , Kiyoyasu Hiwada , Akira Nakazawa
- Applicant: Harutada Dewa , Kiyoyasu Hiwada , Akira Nakazawa
- Applicant Address: JP Tokyo JP Kobe
- Assignee: KABUSHIKI KAISHA NIHON MICRONICS,GUALA TECHNOLOGY CO., LTD.
- Current Assignee: KABUSHIKI KAISHA NIHON MICRONICS,GUALA TECHNOLOGY CO., LTD.
- Current Assignee Address: JP Tokyo JP Kobe
- Agency: Oliff PLC
- International Application: PCT/JP2012/064232 WO 20120531
- International Announcement: WO2013/179471 WO 20131205
- Main IPC: G01R1/067
- IPC: G01R1/067 ; H01L21/66 ; G01R31/36

Abstract:
A testing device and method of a quantum battery by a semiconductor probe capable of evaluating electric characteristics of a charge layer in the middle of a production process of the quantum battery without damaging the charge layer. On semiconductor probe constituted by stacking electrode and metal oxide semiconductor on support body, and probe charge layer is formed of the same material as that of quantum battery and irradiated with ultraviolet rays. Forming probe charge layer of same material as that of quantum battery on semiconductor probe enables evaluation without damaging charge layer of the quantum battery. Testing device and method are provided which measure the charge/discharge characteristics of a charge layer in the middle of producing the quantum battery by a voltmeter and a constant current source or a discharge resistor by using the semiconductor probe including the probe charge layer.
Public/Granted literature
- US20150192611A1 SEMICONDUCTOR PROBE, TESTING DEVICE AND TESTING METHOD FOR TESTING QUANTUM BATTERY Public/Granted day:2015-07-09
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