Method for creating a flexible, multistable element (5): a silicon component (S) is etched with a beam (P) connecting two ends (E1, E2) of a rigid mass (MU) having a cross-section more than ten times that of said beam (P), SiO2 is grown at 1100° C. for a duration adjusted to obtain, on said beam (P), a first ratio (RA) of more than 1 between the section of a first peripheral layer (CP1) of SiO2, and that of a first silicon core (A1), and, on said mass (MU), a second ratio (RB) between the section of a second peripheral layer (CP2) of SiO2 and that of a second silicon core (A2), which is less than a hundredth of said first ratio (RA); cooling to ambient temperature is performed, to deform said beam (P) by buckling when said mass (MU) cools and contracts more than said beam (P).