Invention Grant
- Patent Title: Gate boosted low drop regulator
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Application No.: US15086956Application Date: 2016-03-31
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Publication No.: US09778672B1Publication Date: 2017-10-03
- Inventor: Zhuo Gao , Bupesh Pandita
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: G05F1/575
- IPC: G05F1/575

Abstract:
In certain aspects, a voltage regulator includes a pass transistor having a drain coupled to an input of the voltage regulator, a source coupled to an output of the voltage regulator, and a gate. The voltage regulator also includes an amplifier having a first input coupled to a reference voltage, a second input coupled to a feedback voltage, and an output, wherein the feedback voltage is approximately equal to or proportional to a voltage at the output of the voltage regulator. The voltage regulator further includes a voltage booster having an input coupled to the output of the amplifier and an output coupled to the gate of the pass transistor, wherein the voltage booster is configured to boost a voltage at the input of the voltage booster to generate a boosted voltage, and to output the boosted voltage at the output of the voltage booster.
Public/Granted literature
- US20170285675A1 GATE BOOSTED LOW DROP REGULATOR Public/Granted day:2017-10-05
Information query
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