- Patent Title: Methods for performing model-based lithography guided layout design
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Application No.: US14282754Application Date: 2014-05-20
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Publication No.: US09779186B2Publication Date: 2017-10-03
- Inventor: Jun Ye , Yu Cao , Hanying Feng
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/00 ; G03F1/36

Abstract:
Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.
Public/Granted literature
- US20140317580A1 METHODS FOR PERFORMING MODEL-BASED LITHOGRAPHY GUIDED LAYOUT DESIGN Public/Granted day:2014-10-23
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