Invention Grant
- Patent Title: Sub-threshold enabled flash memory system
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Application No.: US15245016Application Date: 2016-08-23
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Publication No.: US09779788B1Publication Date: 2017-10-03
- Inventor: Christophe J. Chevallier , Daniel M. Cermak , Scott Hanson
- Applicant: Ambiq Micro, Inc
- Applicant Address: US TX Austin
- Assignee: Ambiq Micro, Inc.
- Current Assignee: Ambiq Micro, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C7/14

Abstract:
A flash memory system for use in an electronic system comprising an integrated circuit such as a microcontroller. The flash memory system embodies one or more circuits adapted to operate at sub- or near-threshold voltage levels. These low-power circuits are selectively activated or de-activated to balance power dissipation with the response time of the memory system required in particular applications.
Public/Granted literature
- US20170287534A1 SUB-THRESHOLD ENABLED FLASH MEMORY SYSTEM Public/Granted day:2017-10-05
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