Invention Grant
- Patent Title: Memory circuit with write-bypass portion
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Application No.: US15446812Application Date: 2017-03-01
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Publication No.: US09779803B1Publication Date: 2017-10-03
- Inventor: Brian Konigsburg , Paul Keaton Tschirhart
- Applicant: Brian Konigsburg , Paul Keaton Tschirhart
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Tarolli, Sunheim, Covell & Tummino LLP
- Main IPC: G11C11/44
- IPC: G11C11/44 ; H03K19/195 ; H01L39/22

Abstract:
One example includes a memory circuit. The memory circuit includes a memory array in which contiguous rows of the memory array are organized as a write-bypass portion that comprises a first portion of the rows and a main memory portion that includes a remaining portion of the rows. A given data word is stored in each of a row in the write-bypass portion and another row in the main memory portion during a data write operation in response to word-write signals and bit-write signals associated with each of the respective plurality of contiguous columns. The circuit also includes a control logic configured to store data associated with storage locations of the given data word in each of the row in the write-bypass portion and the other row in the main memory portion to facilitate access of the given data word during a data read operation.
Information query