Methods of operating a memory device during a programming operation, and memory devices so configured, including increasing a voltage applied to a selected access line from a first voltage while maintaining a voltage applied to an unselected access line at the first voltage. The selected access line is connected to a control gate of a target memory cell of a string of series-connected memory cells that is targeted for programming during the programming operation and the unselected access line is connected to a control gate of a second memory cell of the string of series-connected memory cells that is untargeted for programming during the programming operation. After the voltage applied to the selected access line reaches a second voltage, the methods further include increasing the voltage applied to the unselected access line from the first voltage while increasing the voltage applied to the selected access line from the second voltage.