Invention Grant
- Patent Title: Magnetic memory device
-
Application No.: US15438856Application Date: 2017-02-22
-
Publication No.: US09779835B1Publication Date: 2017-10-03
- Inventor: Michael Arnaud Quinsat , Takuya Shimada , Hirofumi Morise , Masaki Kado , Yasuaki Ootera , Tsuyoshi Kondo , Shiho Nakamura
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2016-156201 20160809
- Main IPC: G11C19/08
- IPC: G11C19/08 ; H01L43/02

Abstract:
According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.
Information query