Invention Grant
- Patent Title: Method for controlling magnetic multi-domain state
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Application No.: US15125326Application Date: 2014-03-12
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Publication No.: US09779836B2Publication Date: 2017-10-03
- Inventor: Chong Bi , Shibing Long , Ming Liu
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/CN2014/073289 WO 20140312
- International Announcement: WO2015/135156 WO 20150917
- Main IPC: G11C11/14
- IPC: G11C11/14 ; G11C19/08

Abstract:
The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an additional external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and keeps stable when the current is removed. Such a method may be used for magnetic memory or spin-logic device to implement a nonvolatile multi-valued storage, multi-bits logic operation, or neuromorphic computing.
Public/Granted literature
- US20170092374A1 METHOD FOR CONTROLLING MAGNETIC MULTI-DOMAIN STATE Public/Granted day:2017-03-30
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