Invention Grant
- Patent Title: Method of manufacturing semiconductor wafers and method of manufacturing a semiconductor device
-
Application No.: US14878362Application Date: 2015-10-08
-
Publication No.: US09779931B2Publication Date: 2017-10-03
- Inventor: Johannes Freund , Helmut Oefner , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/265 ; H01L21/66 ; H01L23/544 ; H01L21/263 ; H01L21/324

Abstract:
An embodiment of a method of manufacturing semiconductor wafers comprises determining at least one material characteristic for at least two positions of a semiconductor ingot. A notch or a flat is formed in a semiconductor ingot extending along an axial direction. A plurality of markings is formed in the semiconductor ingot. At least some of the plurality of markings at different positions along the axial direction are distinguishable from each other by a characteristic feature set depending on the at least one material characteristic. The semiconductor ingot is then sliced into semiconductor wafers.
Public/Granted literature
- US20170103882A1 Method of Manufacturing Semiconductor Wafers and Method of Manufacturing a Semiconductor Device Public/Granted day:2017-04-13
Information query
IPC分类: