Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US15189191Application Date: 2016-06-22
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Publication No.: US09779933B2Publication Date: 2017-10-03
- Inventor: Kozo Makiyama , Shirou Ozaki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2014-085621 20140417; JP2015-040411 20150302
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/027 ; H01L21/033 ; H01L21/28 ; H01L21/311 ; H01L29/20 ; H01L29/51 ; H01L29/66 ; H01L29/778 ; H01L21/32 ; H01L29/423 ; H03F1/32 ; H03F3/21
Abstract:
A semiconductor device includes a first semiconductor layer made of a nitride semiconductor and formed on a substrate, a second semiconductor layer made of a material including InAlN and formed on the first semiconductor layer, an insulator layer formed by an oxidized surface part of the second semiconductor layer, a gate electrode formed on the insulator layer, and a source electrode and a drain electrode respectively formed on the first or second semiconductor layer.
Public/Granted literature
- US09691605B2 Semiconductor device and method of manufacturing semiconductor device Public/Granted day:2017-06-27
Information query
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