Invention Grant
- Patent Title: Method and structure for cut material selection
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Application No.: US15263959Application Date: 2016-09-13
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Publication No.: US09779944B1Publication Date: 2017-10-03
- Inventor: Sean D. Burns , Lawrence A. Clevenger , Matthew E. Colburn , Nelson M. Felix , Sivananda K. Kanakasabapathy , Yann A. M. Mignot , Christopher J. Penny , Roger A. Quon , Nicole A. Saulnier
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Louis J. Percello
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033
Abstract:
A method for manufacturing a semiconductor device includes forming a plurality of mandrels on a dielectric layer, conformally depositing a spacer layer on the plurality of mandrels, removing a portion of the spacer layer from a top surface of at least one of the plurality of mandrels, removing the at least one of the plurality of mandrels to create at least one opening, and filling the at least opening with a cut fill material, wherein the cut fill material comprises the same material as a material of the spacer layer.
Information query
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