Invention Grant
- Patent Title: LCR test circuit structure for detecting metal gate defect conditions
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Application No.: US13343080Application Date: 2012-01-04
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Publication No.: US09780007B2Publication Date: 2017-10-03
- Inventor: Xu Ouyang , Yunsheng Song , Tso-Hui Ting , Yongchun Xin
- Applicant: Xu Ouyang , Yunsheng Song , Tso-Hui Ting , Yongchun Xin
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26 ; H01L21/66 ; G01R31/28

Abstract:
A test structure for an integrated circuit device includes a series inductor, capacitor, resistor (LCR) circuit having one or more inductor elements, with each inductor element having at least one unit comprising a first segment formed in a first metal layer, a second segment connecting the first metal layer to a semiconductor substrate beneath the first metal layer, and a third segment formed in the semiconductor substrate; and a capacitor element connected in series with each inductor element, the capacitor element defined by a transistor gate structure including a gate electrode as a first electrode, a gate dielectric layer, and the semiconductor substrate as a second electrode.
Public/Granted literature
- US20130169308A1 LCR TEST CIRCUIT STRUCTURE FOR DETECTING METAL GATE DEFECT CONDITIONS Public/Granted day:2013-07-04
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