Invention Grant
- Patent Title: Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module
-
Application No.: US14127476Application Date: 2012-07-02
-
Publication No.: US09780011B2Publication Date: 2017-10-03
- Inventor: Hisayuki Imamura , Suguru Fujita , Junichi Watanabe
- Applicant: Hisayuki Imamura , Suguru Fujita , Junichi Watanabe
- Applicant Address: JP Tokyo
- Assignee: HITACHI METALS, LTD.
- Current Assignee: HITACHI METALS, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2011-146708 20110630
- International Application: PCT/JP2012/066859 WO 20120702
- International Announcement: WO2013/002407 WO 20130103
- Main IPC: H01L23/34
- IPC: H01L23/34 ; B23K35/30 ; B22F7/06 ; B23K35/36 ; B23K35/02 ; C22C1/04 ; C22C5/06 ; C22C5/08 ; C04B37/02 ; H01L23/15 ; H01L23/373 ; B22F9/02 ; B23K101/40 ; H05K1/03 ; H05K3/38

Abstract:
To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Ag powder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-μm equivalent circle average particle diameter by 0.5 to 5.0 mass %, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder≧active metal hydride powder>Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10 μm, d50 of 10 to 35 μm, and d90 of 30 to 50 μm, and in the frequency distribution, a peak of the distribution existing between d50 and d90.
Public/Granted literature
Information query
IPC分类: