Invention Grant
- Patent Title: Interconnection structure and method of forming the same
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Application No.: US15131608Application Date: 2016-04-18
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Publication No.: US09780026B2Publication Date: 2017-10-03
- Inventor: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/40 ; H01L21/4763 ; H01L21/44 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L23/532

Abstract:
An interconnection structure includes a non-insulator structure, a liner layer, a dielectric structure and a conductive structure. The liner layer is present on the non-insulator structure and has an opening therein. The dielectric structure is present on the liner layer. The dielectric structure includes a via opening therein. The conductive structure is present in the via opening of the dielectric structure and electrically connected to the non-insulator structure through the opening of the liner layer. At least a portion of the conductive structure tapers along a direction from the non-insulator structure to the dielectric structure.
Public/Granted literature
- US20170221812A1 INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2017-08-03
Information query
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