Invention Grant
- Patent Title: Three level transfer gate
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Application No.: US14554327Application Date: 2014-11-26
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Publication No.: US09780138B2Publication Date: 2017-10-03
- Inventor: Benoit Dupont
- Applicant: Caeleste CVBA
- Applicant Address: BE Mechelen
- Assignee: CAELESTE CVBA
- Current Assignee: CAELESTE CVBA
- Current Assignee Address: BE Mechelen
- Agency: Workman Nydegger
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H04N5/355 ; H04N5/3745 ; H01L27/146

Abstract:
A method and device of driving a radiation sensor pixel is disclosed. The sensor pixel comprises a sensing element capable of charge generation as a response to impinging radiation, a floating diffusion node, a transfer gate between the sensing element and the floating diffusion node, and a charge storage device connected to the floating diffusion node via a switch. The method comprises biasing the transfer gate to three or more bias voltages OFF, ON and an intermediate bias between OFF and ON. During the period in which the transfer gate is biased to the intermediate bias, if the sensor reaches saturation, the overflown charges may be collected and part of them stored in the charge storage device, for further analysis and merging.
Public/Granted literature
- US20160148962A1 THREE LEVEL TRANSFER GATE Public/Granted day:2016-05-26
Information query
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