Invention Grant
- Patent Title: Method of manufacturing silicon nanowire array
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Application No.: US14908930Application Date: 2014-07-14
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Publication No.: US09780167B2Publication Date: 2017-10-03
- Inventor: Myung Han Yoon , Se Yeong Lee
- Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Gwangju
- Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Gwangju
- Agency: Hauptman Ham, LLP
- Priority: KR10-2013-0086180 20130722
- International Application: PCT/KR2014/006294 WO 20140714
- International Announcement: WO2015/012516 WO 20150129
- Main IPC: H01L29/06
- IPC: H01L29/06 ; B81C1/00 ; H01L21/02 ; H01L21/306 ; H01L21/3205 ; H01L29/16

Abstract:
Provided is a method for manufacturing a silicon nanowire array comprising the steps of: positioning plastic particles separated apart from one another in a uniform random pattern on a silicon substrate; forming a catalyst layer between the plastic particles; removing the plastic particles; vertically etching portions of the silicon substrate that contact the catalyst layer; and removing the catalyst layer. The present invention provides a simple and cost-effective process, enables mass-production through large surface area processing, enables the manufacture of nanowire even at a site having limited resources, and enables the structures of nanowire to be individually controlled.
Public/Granted literature
- US20160308001A1 METHOD OF MANUFACTURING SILICON NANOWIRE ARRAY Public/Granted day:2016-10-20
Information query
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