Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof

Invention Grant

US09780205B2 Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof 有权

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Patent Title: Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof
Application No.: US15104332

Application Date: 2014-08-04
Publication No.: US09780205B2

Publication Date: 2017-10-03
Inventor: Jun Saito , Hirokazu Fujiwara , Tomoharu Ikeda , Yukihiko Watanabe , Toshimasa Yamamoto
Applicant: Jun Saito , Hirokazu Fujiwara , Tomoharu Ikeda , Yukihiko Watanabe , Toshimasa Yamamoto
Applicant Address: JP Toyota JP Kariya
Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
Current Assignee Address: JP Toyota JP Kariya
Agency: Oliff PLC
Priority: JP2013-269264 20131226
International Application: PCT/JP2014/070520 WO 20140804
International Announcement: WO2015/098167 WO 20150702
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L21/761 ; H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L21/04

Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof

Abstract:

A technique disclosed herein improves a voltage resistance of an insulated gate type semiconductor device. A provided method is a method for manufacturing an insulated gate type switching device configured to switch between a front surface electrode and a rear surface electrode. The method includes implanting a first kind of second conductivity type impurities to bottom surfaces of gate trenches and diffusing the implanted first kind of second conductivity type impurities, and implanting a second kind of second conductivity type impurities to the bottom surfaces of the circumferential trenches and diffusing the implanted second kind of second conductivity type impurities.

Public/Granted literature

US20160329422A1 INSULATED GATE TYPE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND INSULATED GATE TYPE SEMICONDUCTOR DEVICE Public/Granted day:2016-11-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的