Invention Grant
- Patent Title: Thin film transistor substrate comprising a photoresist layer formed between a first dielectric layer and an amorphous silicon layer
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Application No.: US15394888Application Date: 2016-12-30
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Publication No.: US09780221B2Publication Date: 2017-10-03
- Inventor: Qibiao Lv
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201410466954 20140912
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; G02F1/1362 ; G02F1/1343 ; G02F1/1368 ; H01L29/66 ; H01L29/49 ; G02F1/1333

Abstract:
A thin film transistor array substrate includes a pixel electrode layout area, a data electrode layout area, a transparent pixel electrode layer formed in the pixel electrode layout area, a first metal layer, a first dielectric layer, an amorphous silicon layer, a second metal layer, a second dielectric layer formed in the pixel electrode layout area and the data electrode layout area. The first dielectric layer covers the first metal layer. The amorphous silicon layer, the second metal layer and the second dielectric layer are sequentially formed on the first dielectric layer. The transparent pixel electrode layer is connected to the second metal layer through a via hole formed in the pixel electrode area of the second dielectric layer. Moreover, a method for manufacturing the thin film transistor array and a liquid crystal display including the thin film transistor array substrate also are provided.
Public/Granted literature
- US20170110593A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY Public/Granted day:2017-04-20
Information query
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