Invention Grant
- Patent Title: Oxide semiconductor device and method for manufacturing same
-
Application No.: US14954669Application Date: 2015-11-30
-
Publication No.: US09780228B2Publication Date: 2017-10-03
- Inventor: Hyun Jae Kim , Yeong-gyu Kim , Ji Hoon Park , Seokhyun Yoon , Seonghwan Hong
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: KR10-2014-0168445 20141128
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/786 ; H01L29/24 ; H01L21/02
Abstract:
Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the inventive concept includes a substrate, and an oxide semiconductor layer on the substrate having different concentration of oxygen vacancy in the thickness direction.
Public/Granted literature
- US20160163867A1 OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2016-06-09
Information query
IPC分类:
