Invention Grant
- Patent Title: SPAD-type photodiode
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Application No.: US15280177Application Date: 2016-09-29
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Publication No.: US09780247B2Publication Date: 2017-10-03
- Inventor: Norbert Moussy , Jean-Louis Ouvrier-Buffet
- Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee Address: FR Paris
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR1559237 20150930
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/0352 ; H01L31/0224
Abstract:
A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.
Public/Granted literature
- US20170092801A1 SPAD-TYPE PHOTODIODE Public/Granted day:2017-03-30
Information query
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