Invention Grant
- Patent Title: Self-aligned mask for ion implantation
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Application No.: US14995698Application Date: 2016-01-14
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Publication No.: US09780250B2Publication Date: 2017-10-03
- Inventor: Vikram M. Bhosle , Timothy J. Miller , Tapash Chakraborty , Prerna Goradia , Robert J. Visser
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L31/068 ; H01L21/266

Abstract:
An improved method of doping a workpiece is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A patterned implant is performed on one surface of the workpiece. A self-aligned masking process is then performed, which is achieved by exploiting the changes in surface properties caused by the patterned implant. The masking process includes applying a coating that preferentially adheres to the previously implanted regions. A blanket implant is then performed, which serves to implant the portions of the workpiece that are not covered by the coating. Thus, the blanket implant is actually a complementary implant, doping the regions that were not implanted by the first patterned implant. The coating is then optionally removed from the workpiece.
Public/Granted literature
- US20170207361A1 Self-Aligned Mask For Ion Implantation Public/Granted day:2017-07-20
Information query
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