Invention Grant
- Patent Title: Light-emitting element and light-emitting device including a first p-side semiconductor layer and a second p-side semiconductor layer
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Application No.: US15267691Application Date: 2016-09-16
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Publication No.: US09780261B2Publication Date: 2017-10-03
- Inventor: Keiji Emura , Yoshiki Inoue , Hiroaki Kageyama
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2015-184745 20150918
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/62 ; H01L33/20

Abstract:
A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.
Public/Granted literature
- US20170084787A1 LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE Public/Granted day:2017-03-23
Information query
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