Invention Grant
- Patent Title: Magnetoresistive element
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Application No.: US14859024Application Date: 2015-09-18
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Publication No.: US09780298B2Publication Date: 2017-10-03
- Inventor: Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Kenji Noma , Hiroaki Yoda
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2010-208616 20100916
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G01R33/09 ; H01F10/30 ; G11B5/66 ; G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L27/22

Abstract:
According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
Public/Granted literature
- US20160013398A1 MAGNETORESISTIVE ELEMENT Public/Granted day:2016-01-14
Information query
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