Invention Grant
- Patent Title: Semiconductor memory device and method of driving the same
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Application No.: US14807694Application Date: 2015-07-23
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Publication No.: US09785380B2Publication Date: 2017-10-10
- Inventor: Byoung In Joo
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0033802 20150311
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
Disclosed is a method of driving a semiconductor memory device, which programs first page data and second page data in a selected page of a memory cell array, the method including: transmitting a first data buffer control signal to a data buffer so that a data buffer receives the first page data; transmitting a second data buffer control signal to the data buffer so that the data buffer receives the second page data; determining a program option of the first page data; and programming the first page data and the second page data in the selected page, in which the data buffer receives at least some elements of the second page data while the determining of the program option of the first page data is performed.
Public/Granted literature
- US20160266845A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME Public/Granted day:2016-09-15
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