Invention Grant
- Patent Title: GOA circuit based on P-type thin film transistors
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Application No.: US14770824Application Date: 2015-05-20
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Publication No.: US09786239B2Publication Date: 2017-10-10
- Inventor: Shangcao Cao
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Leong C. Lei
- Priority: CN201510160939 20150407
- International Application: PCT/CN2015/079377 WO 20150520
- International Announcement: WO2016/161694 WO 20161013
- Main IPC: G09G3/36
- IPC: G09G3/36 ; G02F1/1362 ; G02F1/1368 ; H01L27/12 ; G11C19/28 ; G11C19/18

Abstract:
The present invention provides a GOA circuit based on P-type thin film transistor, comprising a plurality of GOA unit circuits which are cascade connected, and the GOA unit circuit of every stage comprises a forward-backward scan module (100), an output module (200), a pull-down holding module (300) and a pull-down module (400); the GOA unit circuit of the nth stage and the GOA unit circuit of the n+1th stage adjacent thereto are one cycle; the forward-backward scan module (100) employs the first high frequency clock signal (LCK) and the first backward high frequency clock signal (XLCK) to control the forward-backward scan of the P-type thin film transistor. The GOA circuit based on P-type thin film transistor can ease the deterioration of the thin film transistors in the forward-backward scan module, and reduce the circuit power consumption to decrease the number of the signal lines and realize the narrow frame design. Moreover, it can promote the stability of the GOA circuit and ensure the smooth output of the scan signal (G(n)).
Public/Granted literature
- US20170047031A1 GOA CIRCUIT BASED ON P-TYPE THIN FILM TRANSISTOR Public/Granted day:2017-02-16
Information query
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