A memory control circuit to control a first memory comprising a plurality of MRAM cells, each MRAM cell including of a magnetoresistive element to store data, has a second memory, when there is a read request to a first address of the first memory, to read data of a second address different from the first address, from the first memory and store the read data, a controller to control access to the first memory and the second memory, a capacitor connected in series to the magnetoresistive element, and a sense amplifier to sense a logic of the data from a voltage between both electrodes of the capacitor, the voltage varying in accordance with a current flowing through the magnetoresistive element.