A method for reading an electronic memory device including N memory cells Ci with 1≧i≧N and N≧2, each cell Ci having a resistance Ri, the method including for each cell Ci, determining a set Ei of resistance values capable of being associated with the resistance Ri of the cell Ci; for each combination of N variables Vi, each variable Vi taking successively each resistance value among the predetermined set Ei, applying a mathematical function to the combination to obtain a resulting resistance value; for each combination of N variables Vi, associating a logic state of the electronic memory device with the resulting resistance value obtained previously, according to a comparison of the resulting resistance value with a same threshold resistance value; associating a resistance value with each resistance Ri to obtain a particular combination of N variables Vi; determining the logic state of the electronic memory device.