A memory chip for dynamic approximate storage includes an array of memory cells associated with at least two regions. The chip further includes at least one threshold register for storing values for thresholds for memory cells corresponding to each of the at least two regions; and control logic to programmatically adjust the values for the thresholds for the memory cells. A method of controlling a storage device for dynamic approximate storage includes modifying at least one value stored in a threshold register and associated with at least one cell in a region of a memory comprising at least two regions to apply a biasing for the at least one cell, wherein the biasing adjusts ranges for values in a cell.