Invention Grant
- Patent Title: Forming patterned graphene layers
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Application No.: US14699471Application Date: 2015-04-29
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Publication No.: US09786405B2Publication Date: 2017-10-10
- Inventor: Ali Afzali-Ardakani , Ahmed Maarouf , Glenn J. Martyna , Katherine Saenger
- Applicant: International Business Machines Corporation , Egypt Nanotechnologies Center (EGNC)
- Applicant Address: US NY Armonk EG Cairo
- Assignee: International Business Machines Corporation,Egypt Nanotechnologies Center
- Current Assignee: International Business Machines Corporation,Egypt Nanotechnologies Center
- Current Assignee Address: US NY Armonk EG Cairo
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: H01B1/04
- IPC: H01B1/04 ; C23F1/02 ; H01L21/04 ; H01L21/02 ; B32B15/20 ; B32B9/04 ; B32B9/00 ; H01L21/324 ; B32B3/00

Abstract:
Structures and methods for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
Public/Granted literature
- US20150235730A1 Forming Patterned Graphene Layers Public/Granted day:2015-08-20
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