Invention Grant
- Patent Title: Wafer processing method and electronic device
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Application No.: US15225360Application Date: 2016-08-01
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Publication No.: US09786490B2Publication Date: 2017-10-10
- Inventor: Seiji Harada
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2015-160091 20150814
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/683 ; H01L21/78 ; H01L21/304 ; H01L21/67
Abstract:
Disclosed herein is a wafer processing method for processing the back side of a wafer having a plurality of devices formed on the front side so as to be separated by a plurality of crossing division lines. The wafer processing method includes a back grinding step of grinding the back side of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a back polishing step of polishing the back side of the wafer after performing the back grinding step, thereby removing grinding strain, and a diamond-like carbon film deposition step of forming a diamond-like carbon film on the back side of the wafer after performing the back polishing step.
Public/Granted literature
- US20170047221A1 WAFER PROCESSING METHOD AND ELECTRONIC DEVICE Public/Granted day:2017-02-16
Information query
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