A method for placing a resist film of a region having a small film thickness with good shape accuracy is provided. The method has processes of placing a photoresist film 15 on a substrate body 10, exposing the photoresist film 15 using a halftone mask 30 having light transmittances of three or more tones, and developing the photoresist film 15. The photoresist film 15 after the development has a first photoresist film 16 and a second photoresist film 17 that is thicker than the first photoresist film 16. On the substrate body 10 after the development, the second photoresist film 17 is placed at a location where the second photoresist film 17 can be placed without removing the photoresist film 15.