Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.