Invention Grant
- Patent Title: Mechanisms for forming semiconductor device having isolation structure
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Application No.: US14153593Application Date: 2014-01-13
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Publication No.: US09786542B2Publication Date: 2017-10-10
- Inventor: Zih-I Chuang , Chun-Ta Wu , Chia-Lun Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/324 ; H01L29/06 ; H01L29/66 ; H01L29/78
Abstract:
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having an upper surface. The semiconductor device also includes a recess extending from the upper surface into the semiconductor substrate. The semiconductor device further includes an isolation structure in the recess, and the isolation structure has an upper portion and a lower portion.
Public/Granted literature
- US20150200127A1 MECHANISMS FOR FORMING SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE Public/Granted day:2015-07-16
Information query
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