Invention Grant
- Patent Title: Methods of forming fine patterns including pad portion and line portion
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Application No.: US15084225Application Date: 2016-03-29
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Publication No.: US09786552B2Publication Date: 2017-10-10
- Inventor: Do Youn Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0167733 20151127
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L21/033 ; H01L21/311 ; H01L27/105

Abstract:
A method of forming fine patterns includes forming a partition on a base layer. The partition includes a partition block, a first open region provided to face the partition block, and first lines extending from the partition block to the first open region. A spacer is formed on sidewalls of the partition to define a second open region overlapping with the first open region and to include second lines on sidewalls of the first lines. The partition may be removed to open a third open region occupied by the partition block and spaces between the second lines. A target pattern is formed to include third lines filling the spaces between the second lines, a first pad block filling the second open region, and a second pad block filling the third open region. Each of the first and second pad blocks is separated into a plurality of pads.
Public/Granted literature
- US20170154809A1 METHODS OF FORMING FINE PATTERNS INCLUDING PAD PORTION AND LINE PORTION Public/Granted day:2017-06-01
Information query
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