Invention Grant
- Patent Title: Aspect ratio for semiconductor on insulator
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Application No.: US15400408Application Date: 2017-01-06
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Publication No.: US09786566B2Publication Date: 2017-10-10
- Inventor: Effendi Leobandung
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Louis J. Percello
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/088 ; H01L21/84 ; H01L21/762 ; H01L21/308 ; H01L21/311 ; H01L21/3205 ; H01L21/3213 ; H01L21/8234 ; H01L27/12 ; H01L29/06 ; H01L29/20 ; H01L29/417 ; H01L29/66
Abstract:
A method comprises forming a first set of one or more fins in a first region from an insulated substrate and a second set of one or more fins in a second region from the insulated substrate. The insulated substrate comprises a silicon substrate, and an insulator layer deposited on the silicon substrate. The first region comprises a first material layer and the second region comprises a second material layer.
Public/Granted literature
- US20170117194A1 ASPECT RATIO FOR SEMICONDUCTOR ON INSULATOR Public/Granted day:2017-04-27
Information query
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