Invention Grant
- Patent Title: Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device
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Application No.: US12741854Application Date: 2008-11-07
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Publication No.: US09786576B2Publication Date: 2017-10-10
- Inventor: Hiroshi Matsutani , Takumi Ueno , Alexandre Nicolas , Ken Nanaumi
- Applicant: Hiroshi Matsutani , Takumi Ueno , Alexandre Nicolas , Ken Nanaumi
- Applicant Address: JP Tokyo
- Assignee: HITACHI CHEMICAL COMPANY, LTD
- Current Assignee: HITACHI CHEMICAL COMPANY, LTD
- Current Assignee Address: JP Tokyo
- Agency: Fitch Even Tabin & Flannery LLP
- Priority: JP2007-293631 20071112
- International Application: PCT/JP2008/070323 WO 20081107
- International Announcement: WO2009/063808 WO 20090522
- Main IPC: B32B3/30
- IPC: B32B3/30 ; G03F7/20 ; G03F7/004 ; H01L23/31 ; G03F7/023 ; G03F7/40 ; H01L23/00

Abstract:
A positive-type photosensitive resin composition includes (A) a phenol resin modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms; (B) a compound that produces an acid by light; (C) a thermal crosslinking agent; and (D) a solvent. The positive-type photosensitive resin composition according to the present invention can be developed by an alkaline aqueous solution, and an effect thereof is that a resist pattern having sufficiently high sensitivity and resolution, excellent adhesion, and good thermal shock resistance can be formed.
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