Invention Grant
- Patent Title: Self-alignment for redistribution layer
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Application No.: US14081969Application Date: 2013-11-15
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Publication No.: US09786580B2Publication Date: 2017-10-10
- Inventor: Ku-Feng Yang , Ming-Tsu Chung , Hong-Ye Shih , Jiung Wu , Chen-Yu Tsai , Hsin-Yu Chen , Tsang-Jiuh Wu , Wen-Chih Chiou
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L21/768 ; H01L23/544 ; H01L25/00 ; H01L25/065 ; H01L23/00

Abstract:
An apparatus comprising a substrate with multiple electronic devices. An interconnect structure formed on a first side of the substrate interconnects the electronic devices. Dummy TSVs each extend through the substrate and form an alignment mark on a second side of the substrate. Functional TSVs each extend through the substrate and electrically connect to the electronic devices. A redistribution layer (RDL) formed on the second side of the substrate interconnects ones of the dummy TSVs with ones of the functional TSVs. Step heights of the RDL over the functional TSVs are less than a predetermined value, whereas step heights of the RDL over the dummy TSVs are greater than the predetermined value.
Public/Granted literature
- US20150137382A1 SELF-ALIGNMENT FOR REDISTRIBUTION LAYER Public/Granted day:2015-05-21
Information query
IPC分类: