Invention Grant
- Patent Title: Capacitor in post-passivation structures and methods of forming the same
-
Application No.: US15333879Application Date: 2016-10-25
-
Publication No.: US09786591B2Publication Date: 2017-10-10
- Inventor: Hao-Yi Tsai , Hsien-Wei Chen , Hung-Yi Kuo , Tung-Liang Shao , Ying-Ju Chen , Tsung-Yuan Yu , Jie Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/768 ; H01L23/52 ; H01L23/485 ; H01L29/92 ; H01L23/522 ; H01L49/02 ; H01L23/48 ; H01L23/31 ; H01L23/00 ; H01L23/532 ; H01L29/00 ; H01L23/50 ; H01L23/525
Abstract:
A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation layer; and a capacitor insulator including the portion of the passivation layer.
Public/Granted literature
- US20170040256A1 Capacitor in Post-Passivation Structures and Methods of Forming the Same Public/Granted day:2017-02-09
Information query
IPC分类:
