A semiconductor device with a ring structure surrounding a through silicon via (TSV) electrode and a method for forming the same are disclosed. The method includes receiving a substrate including a back side and a front side having a conductor thereon, forming a via hole in the substrate and exposing the conductor, forming a groove extending from the back side into the substrate and surrounding the via hole, forming a first material layer in the via hole, and forming a second material layer in the groove. The groove filled with the second material layer forms the ring structure, while the via hole filled with the first material layer forms the TSV electrode.