A fuse structure is provided above a first portion of a semiconductor material. The fuse structure includes a first end region containing a first portion of a metal structure having a first thickness, a second end region containing a second portion of the metal structure having the first thickness, and a neck region located between the first and second end regions. The neck region contains a third portion of the metal structure having a second thickness that is less than the first thickness, wherein a portion of the neck region is located in a gap positioned between a bottom III-V compound semiconductor material portion and a top III-V compound semiconductor material portion.