Invention Grant
- Patent Title: Semiconductor device with air gaps and method for fabricating the same
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Application No.: US14567756Application Date: 2014-12-11
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Publication No.: US09786598B2Publication Date: 2017-10-10
- Inventor: Eun-Jeong Kim , Jin-Yul Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: I P & T Group LLP
- Priority: KR10-2014-0095041 20140725
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L23/528 ; H01L21/764 ; H01L23/532 ; H01L23/535 ; H01L23/522

Abstract:
A semiconductor device includes: a first plug; a bit line which is in contact with the first plug and over the first plug and extended in one direction; a second plug including a first part adjacent to the bit line and a second part adjacent to the first plug; a double air gap which is disposed between the first part of the second plug and the bit line and includes a first air gap surrounding the first part of the second plug and a second air gap parallel to sidewalls of the bit line; and a capping layer suitable for capping the first and second air gaps.
Public/Granted literature
- US20160027727A1 SEMICONDUCTOR DEVICE WITH AIR GAPS AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-01-28
Information query
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