Invention Grant
- Patent Title: Interconnection structure and methods of fabrication the same
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Application No.: US14832072Application Date: 2015-08-21
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Publication No.: US09786602B2Publication Date: 2017-10-10
- Inventor: Shih-Ming Chang , Chih-Tsung Shih
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H01L21/3213 ; H01L21/768 ; H01L21/311

Abstract:
A device includes a substrate feature disposed over a substrate. The substrate feature has a first length extending along a first direction and a second length extending along a second direction. The first length is greater than the second length. The device also includes a first material feature disposed over the substrate. The first material feature has a first surface in physical contact with the substrate feature and a second surface opposite to the first surface. The first surface has a third length extending along the first direction and a fourth length extending along the second direction. The third length is greater than the fourth length. The second surface has a fifth length extending along the first direction and a sixth length extending along the second direction. The sixth length is greater than the fifth length.
Public/Granted literature
- US20170053870A1 Interconnection Structure and Methods of Fabrication the Same Public/Granted day:2017-02-23
Information query
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