Invention Grant
- Patent Title: Metal cap apparatus and method
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Application No.: US14937432Application Date: 2015-11-10
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Publication No.: US09786604B2Publication Date: 2017-10-10
- Inventor: Chen-Yuan Kao , Hung-Wen Su , Chih-Yi Chang , Liang-Yueh Ou Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/532 ; H01L21/768 ; H01L21/288 ; H01L21/3213 ; H01L23/522 ; H01L23/528
Abstract:
A method of forming a metal layer may include forming an opening in a substrate; forming a liner over sidewalls of the opening; filling the opening with a first metal; etching a top surface of the first metal to form a recessed top surface below a top surface of the substrate; and exposing the recessed top surface of the first metal to a solution, the solution containing a second metal different from the first metal, the exposing causing the recessed top surface of the first metal to attract the second metal to form a cap layer over the recessed top surface of the first metal.
Public/Granted literature
- US20160064332A1 Metal Cap Apparatus and Method Public/Granted day:2016-03-03
Information query
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