Invention Grant
- Patent Title: Semiconductor device and a method for manufacturing a semiconductor device
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Application No.: US14809296Application Date: 2015-07-27
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Publication No.: US09786620B2Publication Date: 2017-10-10
- Inventor: Stefan Kramp
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLGIES AG
- Current Assignee: INFINEON TECHNOLGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768

Abstract:
According to various embodiments, a semiconductor device may include: at least one first contact pad on a front side of the semiconductor device; at least one second contact pad on the front side of the semiconductor device; a layer stack disposed at least partially over the at least one first contact pad, wherein the at least one second contact pad is at least partially free of the layer stack; wherein the layer stack includes at least an adhesion layer and a metallization layer; and wherein the metallization layer includes a metal alloy and wherein the adhesion layer is disposed between the metallization layer and the at least one first contact pad for adhering the metal alloy of the metallization layer to the at least one first contact pad.
Public/Granted literature
- US20170033067A1 SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2017-02-02
Information query
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