Invention Grant
- Patent Title: Semiconductor component with dielectric layer stack and voltage divider
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Application No.: US12862821Application Date: 2010-08-25
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Publication No.: US09786659B2Publication Date: 2017-10-10
- Inventor: Wolfgang Werner
- Applicant: Wolfgang Werner
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102009038709 20090825
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L23/52 ; H01L27/08 ; H01L27/06

Abstract:
A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider.
Public/Granted literature
- US20110049667A1 Semiconductor Component With Dielectric Layer Stack Public/Granted day:2011-03-03
Information query
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