Invention Grant
- Patent Title: Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
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Application No.: US15170273Application Date: 2016-06-01
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Publication No.: US09786661B2Publication Date: 2017-10-10
- Inventor: Dechao Guo , Shogo Mochizuki , Andreas Scholze , Chun-Chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , RENESAS ELECTRONICS CORPORATION
- Applicant Address: US NY Armonk JP Kanagawa
- Assignee: International Business Machines Corporation,Renesas Electronics Corporation
- Current Assignee: International Business Machines Corporation,Renesas Electronics Corporation
- Current Assignee Address: US NY Armonk JP Kanagawa
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L29/165 ; H01L21/225 ; H01L21/324 ; H01L29/267
Abstract:
A semiconductor device including a gate structure on a channel region portion of a fin structure, and at least one of an epitaxial source region and an epitaxial drain region on a source region portion and a drain region portion of the fin structure. At least one of the epitaxial source region portion and the epitaxial drain region portion include a first concentration doped portion adjacent to the fin structure, and a second concentration doped portion on the first concentration doped portion. The second concentration portion has a greater dopant concentration than the first concentration doped portion. An extension dopant region extending into the channel portion of the fin structure having an abrupt dopant concentration gradient of n-type or p-type dopants of 7 nm per decade or greater.
Public/Granted literature
- US20160276463A1 METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAIN JUNCTION LEAKAGE REDUCTION Public/Granted day:2016-09-22
Information query
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