Invention Grant
- Patent Title: Memory device and manufacturing method the same
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Application No.: US14844069Application Date: 2015-09-03
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Publication No.: US09786669B2Publication Date: 2017-10-10
- Inventor: Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2005-091318 20050328
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/108 ; B82Y10/00 ; G11C13/00 ; H01L27/12 ; H01L27/28 ; H01L23/482 ; H01L29/786 ; G11C11/34 ; H01L27/105 ; H01L29/45

Abstract:
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
Public/Granted literature
- US20160005740A1 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME Public/Granted day:2016-01-07
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